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High-Density Packaging (MCM, MCP, SIP, 3D
TSV): Market Analysis and Technology Trends |
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TABLE
OF CONTENTS |
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Chapter 1 |
Introduction |
1-1 |
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Chapter 2 |
Executive Summary |
2-1 |
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2.1 |
Summary
of Technology Issues |
2-1 |
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2.2 |
Summary
of Market Forecasts |
2-7 |
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Chapter 3 |
Technology Issues and Trends |
3-1 |
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3.1 |
Overview
of HDP Technology |
3-1 |
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3.1.1 |
Need for
Multiple IC Integration |
3-7 |
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3.1.2 |
Challenges
of Multiple IC Integration |
3-11 |
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3.2 |
Technical
Constraints of Integration |
3-12 |
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3.3 |
Economic
Benefits of HDP |
3-16 |
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3.4 |
Technology
Issues |
3-20 |
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3.4.1 |
Substrates |
3-20 |
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3.4.2 |
Conductors |
3-35 |
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3.4.3 |
Dielectrics |
3-43 |
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3.4.4 |
Vias |
3-45 |
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3.4.5 |
Die
Attachment |
3-48 |
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3.4.6 |
Next
Level Interconnection |
3-57 |
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3.4.7 |
Thermal
Management |
3-59 |
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3.4.8 |
Test and
Inspection |
3-61 |
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3.4.9 |
Design |
3-67 |
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3.5 |
3-D
Modules |
3-73 |
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3.6 |
Superconducting
Interconnects |
3-76 |
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3.7 |
Known
Good Die |
3-77 |
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3.8 |
System In
Package (SIP) |
3-78 |
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3.9 |
Multichip
Package |
3-84 |
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3.10 |
Package-On-Package (PoP) |
3-86 |
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Chapter 4 |
Applications |
4-1 |
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4.1 |
Overview
of HDP Applications |
4-1 |
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4.2 |
Military
and Aerospace |
4-2 |
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4.3 |
Computer
and Peripheral Equipment |
4-6 |
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4.4 |
Communications |
4-9 |
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4.5 |
Consumer |
4-12 |
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4.6 |
Industrial |
4-14 |
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Chapter 5 |
Competitive Environment |
5-1 |
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5.1 |
Overview
of the HDP Competitive Environment |
5-1 |
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5.2 |
Joint
Ventures and Cooperative Agreements |
5-6 |
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5.3 |
HDP
Manufacturers |
5-8 |
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Advanced
Packaging Systems |
5-10 |
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Aeroflex Laboratories |
5-11 |
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AMD |
5-11 |
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AMITEC |
5-12 |
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Amkor
Electronics |
5-13 |
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Analog
Devices |
5-14 |
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Appian
Technology |
5-15 |
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AT&T |
5-15 |
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Ceramic
Packaging |
5-16 |
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ChipSiP |
5-16 |
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C-MAC MicroTechnology |
5-16 |
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CNM-IMB |
5-17 |
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Conexant |
5-17 |
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Control
Data |
5-18 |
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CTM
Electronics |
5-18 |
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CTS |
5-18 |
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5-19 |
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Delco
Electronics |
5-20 |
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Digital
Equipment |
5-20 |
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Elpaq |
5-21 |
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Elpida |
5-21 |
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ERIM |
5-22 |
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5-22 |
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Fujitsu |
5-23 |
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GEC
Plessey |
5-24 |
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General
Electric |
5-24 |
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Hadco |
5-26 |
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Honeywell |
5-26 |
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Hughes |
5-27 |
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Hynx |
5-28 |
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Ibiden |
5-28 |
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IBM |
5-29 |
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ILC Data
Device Corp. |
5-33 |
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IMEC |
5-34 |
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Infineon |
5-36 |
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Interconnect
Systems |
5-36 |
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Interconnex |
5-37 |
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International
Micro Industries |
5-37 |
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Integrated
System Assemblies |
5-38 |
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Intersil |
5-39 |
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Kodak |
5-39 |
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Kyocera |
5-40 |
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Lexmark
International |
5-41 |
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Lucent
Technologies |
5-41 |
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MicroModule Systems |
5-43 |
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Micron |
5-45 |
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Mitsubishi |
5-46 |
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Motorola |
5-46 |
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nCHIP |
5-47 |
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NEC |
5-48 |
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Pacific
Microelectronics |
5-49 |
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Pacific
Microelectronics Centre |
5-49 |
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Packard-Hughes
Interconnect |
5-50 |
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Panda
Project |
5-51 |
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Phillips
Laboratory |
5-51 |
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Philips |
5-53 |
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Pico
Systems |
5-53 |
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Quadrant
Technology |
5-54 |
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Renasas |
5-54 |
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RISH |
5-55 |
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Rockwell
Avionics |
5-55 |
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5-56 |
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S3 |
5-56 |
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Samsung
Electronics |
5-57 |
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Sensonix |
5-58 |
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Sharp |
5-59 |
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Sheldahl |
5-59 |
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Shinko |
5-60 |
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S-MOS
Systems |
5-61 |
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Spansion |
5-61 |
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Spectra |
5-62 |
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Tektronix |
5-63 |
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Teledyne
Electronic Technologies |
5-63 |
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Tessera |
5-64 |
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5-65 |
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Thomson
Consumer Electronics |
5-68 |
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Toshiba |
5-68 |
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TRW |
5-68 |
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United
Technologies |
5-69 |
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White
Electronic Designs |
5-69 |
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W.L. Gore
& Associates |
5-69 |
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Z Systems |
5-70 |
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Chapter
6 |
3-D-TSV
Technology |
6-1 |
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6.1 |
Driving
Forces In 3D-TSV |
6-1 |
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6.2 |
3-D
Package Varieties |
6-11 |
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6.3 |
TSV
Processes |
6-17 |
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6.4 |
Critical Processing
Technologies |
6-19 |
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6.4.1 |
Plasma
Etch Technology |
6-23 |
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6.4.2 |
Cu
Plating |
6-24 |
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6.4.3 |
Thin
Wafer Bondling |
6-25 |
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6.4.4 |
Wafer
Thinning/CMP |
6-25 |
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6.5 |
Applications |
6-26 |
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6.6 |
Limitations Of 3-DPackaging
Technology |
6-32 |
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6.6.1 |
Thermal Management |
6-32 |
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6.6.2 |
Cost |
6-34 |
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6.6.3 |
Design Complexity |
6-35 |
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6.6.4 |
Time To Delivery |
6-40 |
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6.7 |
Company
Profiles |
6-41 |
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ASE |
6-41 |
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ALLVIA |
6-41 |
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Amkor |
6-42 |
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BeSang |
6-45 |
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Chartered
Semiconductor |
6-47 |
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Cubic
Wafer |
6-48 |
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Elpida Memory |
6-48 |
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Freescale |
6-49 |
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Fujikura |
6-49 |
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IBM |
6-50 |
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Infineon |
6-51 |
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Intel |
6-52 |
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Jazz
Semiconductor |
6-53 |
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Micron
Technology |
6-54 |
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NEC |
6-56 |
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NXP |
6-57 |
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Oki
Electric |
6-59 |
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Renesas |
6-60 |
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Samsung |
6-61 |
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Sharp |
6-63 |
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Silex Microsystems |
6-64 |
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STATS
ChipPAC |
6-65 |
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STMicroelectronics |
6-66 |
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Tessera |
6-67 |
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Tezzaron |
6-69 |
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Toshiba |
6-72 |
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TSMC |
6-73 |
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UTAC |
6-74 |
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Ziptronix |
6-75 |
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ZyCube |
6-77 |
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Chapter 7 |
Market Forecast |
7-1 |
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7.1 |
Overview
of Multichip Modules |
7-1 |
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7.2 |
Driving
Forces |
7-5 |
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7.3 |
Alternative Packaging Technologies |
7-7 |
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7.4 |
Worldwide
IC Market Forecast |
7-24 |
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7.5 |
Worldwide
Packaging Market Forecast |
7-28 |
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7.6 |
Worldwide
MCM Market Forecast |
7-31 |
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7.6.1 |
Worldwide
Forecast By Substrate Type |
7-36 |
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7.6.2 |
Worldwide
3-D Through Silicon Via (TSV) Market |
7-39 |
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7.6.2 |
Market
Forecast By Application |
7-43 |
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7.6.3 |
Market
Forecast By End Use |
7-49 |
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LIST
OF TABLES |
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3.1 |
Multichip
Modules Vs. Circuit Board Assemblies |
3-17 |
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3.2 |
MCM Cost
Comparison |
3-19 |
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3.3 |
Substrate
Technology Features |
3-23 |
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3.4 |
Metal
Conductors in MCMs |
3-36 |
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3.5 |
Comparison
of Thin-Film and Thick-Film Technologies |
3-39 |
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3.6 |
Characteristics
of Dielectric Materials |
3-46 |
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3.7 |
CTE of
Common Substrates and Adhesives |
3-55 |
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3.8 |
Comparison
of MCM Testers |
3-66 |
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3.9 |
Density
Comparisons of Single Package and 3-D MCM |
3-74 |
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5.1 |
MCM
Manufacturers |
5-9 |
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6.1 |
3-D Mass
Memory Volume Comparison Between Other Technologies And |
6-5 |
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6.2 |
3-D Mass
Memory Weight Comparison Between Other Technologies And |
6-6 |
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6.3 |
Institutions
Working In The Area Of 3D TSV |
6-16 |
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6.4 |
Companies
Working In The Area OF 3D TSV |
6-17 |
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7.1 |
Worldwide
IC Package Market Forecast |
7-29 |
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7.2 |
Worldwide
I/O Package Market Forecast |
7-30 |
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7.3 |
Worldwide
MCM Market |
7-39 |
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7.4 |
Worldwide
MCM-C Market By Application |
7-45 |
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7.5 |
Worldwide
MCM-D Market By Application |
7-46 |
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7.6 |
Worldwide
MCM-L (MCM, SiP, MCP) Market By Application |
7-47 |
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7.7 |
Worldwide
MCM Market By Application |
7-48 |
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7.8 |
Worldwide
Market Forecast Of End Use Applications |
7-52 |
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LIST OF FIGURES |
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1.1 |
Schematic
Cross-Section View Of An MCM-D |
1-3 |
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1.2 |
Cross-Section
Of The RF And Microwave MCM-D Structure |
1-5 |
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1.3 |
Thin Film
Layers On The Planarized Core Layer Of MCM-SL/D
Technology |
1-8 |
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1.4 |
Flip Chip MCP |
1-11 |
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1.5 |
SIP Cross
Section |
1-14 |
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3.1 |
IC
Packaging Trends |
3-2 |
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3.2 |
Technology
Tree For HDP Types |
3-3 |
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3.3 |
Form
Factor Decrease By Package Type |
3-10 |
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3.4 |
High
Power Package Technology Roadmap |
3-32 |
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3.5 |
Comparison
Between Wire Bonding And Bump |
3-50 |
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6.1 |
3-D
Through-Silicon Via (TSV) |
6-3 |
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6.2 |
Silicon Efficiency Comparison Between 3D Packaging
Technology And Other Conventional Packaging Technologies |
6-8 |
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6.3 |
Comparison Between 2D And 3D Packaging Interms Of The Accessability
And Useablity Of Interconnection |
6-9 |
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6.4 |
3D
Packages |
6-10 |
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6.5 |
Through-Silicon
Via (TSV) |
6-18 |
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6.6 |
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6-25 |
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7.1 |
Comparison
Of SOC, MCM, SIP, And SOP |
7-8 |
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7.2 |
Materials
Integrated In The SOP Concept |
7-11 |
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7.3 |
Digital,
RF And Optical Function Integration In One SOP Package |
7-12 |
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7.4 |
Substrate
Warpage Control |
7-14 |
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7.5 |
Effect Of
Elastic Modulus On Sop Package Substrate Warpage |
7-15 |
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7.6 |
Area Assembly
Pitch Reduction |
7-17 |
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7.7 |
Summary
Of Package/Board Materials With Modulus And CTE |
7-18 |
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7.8 |
Low Loss
Dielectrics And Future Requirements |
7-20 |
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7.9 |
Eye
Opening Measurements For Low Loss Dielectrics At 5 Gbps
Data Rate |
7-22 |
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7.10 |
Projection
of 3-D TSV Applications And Process Requirement |
7-41 |
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7.11 |
Market
Forecast of 3-D TSV Wafers by Product |
7-42 |