The Global Market for Equipment

and Materials for IC Manufacturing

TABLE OF CONTENTS

Chapter 1 

Introduction 

1-1

Chapter 2 

Low-K Dielectric Issues and Trends

2-1

2.1

Introduction

2-1

2.2

Ideal Dielectric

2-2

2.3

Types of Low-K Dielectrics

2-5

2.3.1

FSG

2-5

2.3.2

HSQ

2-7

2.3.3

Nanoporous Silica

2-8

2.3.4

Spin-on Polymers

2-9

2.3.5

BCB

2-16

2.3.6

Flowfill

2-16

2.3.7

CVD

2-17

2.3.8

AF4

2-20

2.3.9

PTFE

2-20

2.4

Processing Issues

2-21

2.5

Summary

2-33

2.5.1

Integration Issues

2-33

2.5.2

Low-K Dielectric Issues

2-34

Chapter 3 

Lithography Issues And Trends

3-1

3.1

Optical Systems

3-1

3.1.1

Scanning Projection Aligners

3-5

3.1.2

Step-and-Repeat Aligners

3-14

3.1.3

248nm DUV Resist

3-31

3.1.4

193nm DUV Resist

3-33

3.1.5

Mix-and-Match

3-36

3.1.6

157nm DUV And Resist

3-37

3.1.7

EUV

3-42

3.2

X-Ray Systems

3-46

3.2.1

X-Ray Sources

3-46

3.2.2

X-Ray Masks

3-51

3.2.3

X-Ray Steppers

3-53

3.2.4

X-Ray Resists

3-54

3.3

Electron Beam Systems

3-55

3.4

Ion Beam Systems

3-62

3.4.1

Direct Write

3-62

3.4.2

Ion Channel Masking

3-63

3.4.3

Ion Projection

3-63

3.5

New Technologies

3-65

3.5.1

Mulith Reference Distribution Aerial Image Formation

3-65

3.5.2

Holograms

3-71

3.5.3

X-Ray Laser

3-71

3.5.4

Atom Lithography

3-71

3.5.5

Microlenses

3-75

3.5.6

Nano-Imprint Lithography

3-80

3.5.7

Immersion Lithography

3-84

3.6

Conclusion

3-88

Chapter 4 

CMP Issues and Trends

4-1

4.1

Need for Planarity

4-1

4.1.1

Lithography

4-4

4.1.2

Deposition

4-6

4.1.3

Etching

4-9

4.2

Applications

4-10

4.2.1

Dielectrics

4-10

4.2.2

Metals

4-13

4.3

Planarization Techniques

4-15

4.3.1

Local Planarization

4-15

4.3.1.1 

Deposition-Etchback

4-15

4.3.1.2 

ECR

4-17

4.3.1.3 

Oxide Reflow

4-17

4.3.1.4 

Spin-on-Glass

4-18

4.3.1.5 

TEOS-Ozone

4-18

4.3.1.6 

Laser

4-19

4.3.2

Global Planarization

4-20

4.3.2.1 

Polymer

4-20

4.3.2.2   

Isotropic Etch

4-22

4.3.2.4 

Spin Etch Planarization

4-23

4.3.2.5 

Electropolishing

4-24

4.4

Chemical Mechanical Polishing (CMP)

4-26

4.4.1

Background

4-31

4.4.2

Research Efforts

4-32

4.4.3

Advantages and Disadvantages

4-33

4.4.4

Process Parameters

4-35

4.4.4.1 

STI Planarization

4-36

4.4.4.2 

Copper CMP

4-41

4.4.4.3 

Low-K Integration

4-55

4.4.4.4 

Defect Density

4-67

4.4.4.5 

Metrology

4-69

4.4.5

Device Processing Parameters

4-83

4.4.5.1

Memory Devices

4-83

4.4.5.2 

Logic Devices

4-84

Chapter 5

Factory Automation Issues and Trends

5-1

5.1

Introduction

5-1

5.2

Elements of Automation

5-2

5.2.1

Tool Automation

5-2

5.2.2

Intrabay Automation

5-3

5.2.3

Interbay Automation

5-4

5.2.4

Material-Control System

5-7

5.3

Flexible Automation

5-9

5.4

Reliability

5-11

5.5

Tool Issues and Trends

5-12

5.5.1

Flexible Tool Interface

5-12

5.5.2

Vacuum Robotics

5-31

5.5.3

AGV

5-41

5.5.4

CMP

5-44

5.5.5

300-mm Wafer Transport

5-45

5.5.6

Bridge Tools

5-48

5.5.7

Mini-Environments and Cleanroom Issues

5-51

Chapter 6 

Thin Film Deposition Issues and Trends

6-1

6.1  

Physical Vapor Deposition

6-1

6.1.1

Sputtering Technology

6-2

6.1.2

Plasma Technology

6-5

6.1.3

Reactor Designs

6-14

6.1.3.1

Long-Throw Deposition

6-14

6.1.3.2

Collimated Sputter Deposition

6-16

6.1.3.3

Showerhead Deposition

6-18

6.1.3.4

Ionized PVD

6-22

6.1.4

Semiconductor Processing

6-28

6.1.4.1

Feature Patterning

6-28

6.1.4.2

Gap Fill

6-31

6.2

Chemical Vapor Deposition (CVD) Techniques

6-34

6.2.1

APCVD

6-35

6.2.2

LPCVD

6-39

6.2.3

PECVD

6-42

6.2.4

HDPCVD

6-46

6.2.5

ALD

6-52

Chapter 7 

Plasma Etching  Issues and Trends

7-1

7.1

Introduction

7-1

7.2