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The
Global Market for Equipment and
Materials for IC Manufacturing |
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TABLE OF CONTENTS |
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Chapter 1 |
Introduction |
1-1 |
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Chapter 2 |
Low-K Dielectric Issues and Trends |
2-1 |
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2.1 |
Introduction |
2-1 |
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2.2 |
Ideal Dielectric |
2-2 |
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2.3 |
Types of Low-K Dielectrics |
2-5 |
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2.3.1 |
FSG |
2-5 |
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2.3.2 |
HSQ |
2-7 |
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2.3.3 |
Nanoporous Silica |
2-8 |
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2.3.4 |
Spin-on Polymers |
2-9 |
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2.3.5 |
BCB |
2-16 |
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2.3.6 |
Flowfill |
2-16 |
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2.3.7 |
CVD |
2-17 |
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2.3.8 |
AF4 |
2-20 |
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2.3.9 |
PTFE |
2-20 |
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2.4 |
Processing Issues |
2-21 |
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2.5 |
Summary |
2-33 |
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2.5.1 |
Integration Issues |
2-33 |
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2.5.2 |
Low-K Dielectric Issues |
2-34 |
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Chapter 3 |
Lithography Issues And Trends |
3-1 |
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3.1 |
Optical Systems |
3-1 |
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3.1.1 |
Scanning Projection Aligners |
3-5 |
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3.1.2 |
Step-and-Repeat Aligners |
3-14 |
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3.1.3 |
248nm DUV Resist |
3-31 |
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3.1.4 |
193nm DUV Resist |
3-33 |
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3.1.5 |
Mix-and-Match |
3-36 |
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3.1.6 |
157nm DUV And Resist |
3-37 |
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3.1.7 |
EUV |
3-42 |
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3.2 |
X-Ray Systems |
3-46 |
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3.2.1 |
X-Ray Sources |
3-46 |
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3.2.2 |
X-Ray Masks |
3-51 |
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3.2.3 |
X-Ray Steppers |
3-53 |
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3.2.4 |
X-Ray Resists |
3-54 |
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3.3 |
Electron Beam Systems |
3-55 |
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3.4 |
Ion Beam Systems |
3-62 |
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3.4.1 |
Direct Write |
3-62 |
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3.4.2 |
Ion Channel Masking |
3-63 |
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3.4.3 |
Ion Projection |
3-63 |
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3.5 |
New Technologies |
3-65 |
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3.5.1 |
Mulith Reference Distribution Aerial Image Formation |
3-65 |
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3.5.2 |
Holograms |
3-71 |
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3.5.3 |
X-Ray Laser |
3-71 |
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3.5.4 |
Atom Lithography |
3-71 |
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3.5.5 |
Microlenses |
3-75 |
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3.5.6 |
Nano-Imprint Lithography |
3-80 |
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3.5.7 |
Immersion Lithography |
3-84 |
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3.6 |
Conclusion |
3-88 |
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Chapter 4 |
CMP Issues and Trends |
4-1 |
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4.1 |
Need for Planarity |
4-1 |
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4.1.1 |
Lithography |
4-4 |
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4.1.2 |
Deposition |
4-6 |
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4.1.3 |
Etching |
4-9 |
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4.2 |
Applications |
4-10 |
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4.2.1 |
Dielectrics |
4-10 |
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4.2.2 |
Metals |
4-13 |
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4.3 |
Planarization Techniques |
4-15 |
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4.3.1 |
Local Planarization |
4-15 |
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4.3.1.1 |
Deposition-Etchback |
4-15 |
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4.3.1.2 |
ECR |
4-17 |
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4.3.1.3 |
Oxide Reflow |
4-17 |
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4.3.1.4 |
Spin-on-Glass |
4-18 |
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4.3.1.5 |
TEOS-Ozone |
4-18 |
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4.3.1.6 |
Laser |
4-19 |
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4.3.2 |
Global Planarization |
4-20 |
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4.3.2.1 |
Polymer |
4-20 |
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4.3.2.2 |
Isotropic Etch |
4-22 |
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4.3.2.4 |
Spin Etch Planarization |
4-23 |
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4.3.2.5 |
Electropolishing |
4-24 |
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4.4 |
Chemical Mechanical Polishing (CMP) |
4-26 |
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4.4.1 |
Background |
4-31 |
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4.4.2 |
Research Efforts |
4-32 |
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4.4.3 |
Advantages and Disadvantages |
4-33 |
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4.4.4 |
Process Parameters |
4-35 |
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4.4.4.1 |
STI Planarization |
4-36 |
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4.4.4.2 |
Copper CMP |
4-41 |
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4.4.4.3 |
Low-K Integration |
4-55 |
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4.4.4.4 |
Defect Density |
4-67 |
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4.4.4.5 |
Metrology |
4-69 |
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4.4.5 |
Device Processing Parameters |
4-83 |
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4.4.5.1 |
Memory Devices |
4-83 |
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4.4.5.2 |
Logic Devices |
4-84 |
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Chapter 5 |
Factory Automation Issues and Trends |
5-1 |
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5.1 |
Introduction |
5-1 |
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5.2 |
Elements of Automation |
5-2 |
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5.2.1 |
Tool Automation |
5-2 |
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5.2.2 |
Intrabay Automation |
5-3 |
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5.2.3 |
Interbay Automation |
5-4 |
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5.2.4 |
Material-Control System |
5-7 |
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5.3 |
Flexible Automation |
5-9 |
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5.4 |
Reliability |
5-11 |
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5.5 |
Tool Issues and Trends |
5-12 |
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5.5.1 |
Flexible Tool Interface |
5-12 |
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5.5.2 |
Vacuum Robotics |
5-31 |
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5.5.3 |
AGV |
5-41 |
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5.5.4 |
CMP |
5-44 |
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5.5.5 |
300-mm Wafer Transport |
5-45 |
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5.5.6 |
Bridge Tools |
5-48 |
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5.5.7 |
Mini-Environments and Cleanroom Issues |
5-51 |
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Chapter 6 |
Thin Film Deposition Issues and Trends |
6-1 |
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6.1 |
Physical Vapor Deposition |
6-1 |
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6.1.1 |
Sputtering Technology |
6-2 |
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6.1.2 |
Plasma Technology |
6-5 |
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6.1.3 |
Reactor Designs |
6-14 |
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6.1.3.1 |
Long-Throw Deposition |
6-14 |
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6.1.3.2 |
Collimated Sputter Deposition |
6-16 |
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6.1.3.3 |
Showerhead Deposition |
6-18 |
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6.1.3.4 |
Ionized PVD |
6-22 |
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6.1.4 |
Semiconductor Processing |
6-28 |
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6.1.4.1 |
Feature Patterning |
6-28 |
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6.1.4.2 |
Gap Fill |
6-31 |
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6.2 |
Chemical Vapor Deposition (CVD) Techniques |
6-34 |
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6.2.1 |
APCVD |
6-35 |
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6.2.2 |
LPCVD |
6-39 |
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6.2.3 |
PECVD |
6-42 |
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6.2.4 |
HDPCVD |
6-46 |
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6.2.5 |
ALD |
6-52 |
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Chapter 7 |
Plasma Etching
Issues and Trends |
7-1 |
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7.1 |
Introduction |
7-1 |
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7.2 |
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