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CMP
Technology: Competition,
Products, Markets |
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TABLE OF CONTENTS |
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Chapter 1 |
Introduction |
1-1 |
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Chapter 2 |
Executive Summary |
2-1 |
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2.1 |
Introduction |
2-1 |
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2.2 |
Market Opportunities |
2-9 |
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Chapter 3 |
Planarization Methods |
3-1 |
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3.1 |
Need for Planarity |
3-1 |
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3.1.1 |
Lithography |
3-4 |
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3.1.2 |
Deposition |
3-6 |
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3.1.3 |
Etching |
3-9 |
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3.2 |
Applications |
3-10 |
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3.2.1 |
Dielectrics |
3-10 |
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3.2.2 |
Metals |
3-13 |
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3.3 |
Planarization Techniques |
3-15 |
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3.3.1 |
Local Planarization |
3-15 |
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3.3.1.1 |
Deposition-Etchback |
3-15 |
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3.3.1.2 |
ECR |
3-17 |
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3.3.1.3 |
Oxide Reflow |
3-17 |
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3.3.1.4 |
Spin-on-Glass |
3-18 |
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3.3.1.5 |
TEOS-Ozone |
3-18 |
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3.3.1.6 |
Laser |
3-19 |
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3.3.2 |
Global Planarization |
3-20 |
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3.3.2.1 |
Spin-On Polymer |
3-20 |
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3.3.2.2 |
Polyimide Coating |
3-22 |
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3.3.2.3 |
Isotropic Etch |
3-22 |
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3.3.2.4 |
Spin Etch Planarization |
3-23 |
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3.3.2.5 |
Electropolishing |
3-24 |
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3.4 |
CMP |
3-26 |
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3.4.1 |
Background |
3-31 |
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3.4.2 |
Research Efforts |
3-32 |
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3.4.3 |
Advantages and Disadvantages |
3-33 |
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3.4.4 |
Process Parameters |
3-35 |
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3.4.4.1 |
STI Planarization |
3-36 |
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3.4.4.2 |
Copper CMP |
3-41 |
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3.4.4.3 |
Low-K Integration |
3-55 |
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3.4.4.4 |
Defect Density |
3-67 |
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3.4.4.5 |
Metrology |
3-69 |
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3.4.5 |
Device Processing Parameters |
3-83 |
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3.4.5.1 |
Memory Devices |
3-83 |
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3.4.5.2 |
Logic Devices |
3-84 |
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Chapter 4 |
CMP Consumables |
4-1 |
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4.1 |
Slurries |
4-1 |
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4.1.1 |
Types |
4-1 |
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4.1.2 |
pH Effects |
4-7 |
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4.1.3 |
Oxidizers |
4-10 |
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4.1.4 |
Particle Morphology Effects |
4-11 |
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4.1.5 |
Chemical Distribution Management |
4-13 |
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4.1.6 |
Slurry Supplier Profiles |
4-20 |
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4.2 |
Post-CMP Clean |
4-42 |
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4.3 |
Polishing Pads |
4-48 |
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4.3.1 |
Types |
4-48 |
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4.3.2 |
Performance |
4-49 |
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4.3.3 |
Slurryless Pads |
4-53 |
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Chapter 5 |
CMP Equipment |
5-1 |
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5.1 |
Single-Head Approach |
5-1 |
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5.1.1 |
Advantages |
5-1 |
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5.1.2 |
Disadvantages |
5-3 |
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5.2 |
Multi-Head Approach |
5-4 |
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5.2.1 |
Advantages |
5-4 |
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5.2.2 |
Disadvantages |
5-5 |
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5.3 |
Equipment Profiles |
5-6 |
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5.3.1 |
Applied Materials |
5-7 |
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5.3.2 |
Ebara |
5-8 |
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5.3.3 |
R. Howard Strasbaugh |
5-9 |
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5.3.4 |
Lam Research |
5-10 |
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5.3.5 |
SpeedFam-IPEC |
5-11 |
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5.3.6 |
Peter Wolters |
5-14 |
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5.3.7 |
Other Entrants |
5-15 |
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5.4 |
Clustered Tools |
5-17 |
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Chapter 6 |
User Issues |
6-1 |
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6.1 |
Cost of Ownership |
6-1 |
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6.2 |
User Requirements |
6-7 |
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6.3 |
Benchmarking a Vendor |
6-10 |
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6.3.1 |
Pricing |
6-10 |
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6.3.2 |
Vendor Commitment and Attitudes |
6-12 |
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6.3.3 |
Vendor Capabilities |
6-13 |
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6.3.4 |
System Capabilities |
6-15 |
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6.4 |
User-Supplier Synergy |
6-16 |
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6.4.1 |
Feedback During Equipment Evaluation |
6-16 |
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6.4.2 |
Feedback During Device Production |
6-17 |
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6.5 |
Reliability |
6-18 |
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6.6 |
Equipment Maintainability |
6-19 |
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Chapter 7 |
Market Forecast |
7-1 |
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7.1 |
Introduction |
7-1 |
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7.2 |
Market Forecast Assumptions |
7-5 |
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7.3 |
Equipment Market |
7-6 |
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7.3.1 |
Introduction |
7-6 |
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7.3.2 |
CMP Polisher Market |
7-7 |
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7.3.3 |
End-Point Detector Market |
7-10 |
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7.3.4 |
Chemical Distribution/Mixing Market |
7-12 |
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7.3.5 |
Film Thickness/Metrology Market |
7-14 |
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7.4 |
Consumable Market |
7-16 |
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7.4.1 |
Slurry |
7-20 |
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7.4.2 |
Pads |
7-22 |
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LIST OF FIGURES |
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1.1 |
Process Integration for CMP |
1-2 |
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3.1 |
Planarization Lengths of Various Methods |
3-16 |
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3.2 |
Normalized Removal Rates |
3-27 |
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3.3 |
Reduced Complexity With Copper |
3-43 |
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3.4 |
Copper Loss From CMP |
3-48 |
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3.5 |
CMP Copper Process Technologies |
3-50 |
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3.6 |
CMP Performance Improvements |
3-52 |
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3.7 |
Polish Endpoint Control |
3-81 |
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4.1 |
Effect of Nitrate Ions on the Cu Removal Rate |
4-8 |
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4.2 |
Removal Rate of Ta |
4-9 |
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4.3 |
Bulk Chemical Distribution System |
4-16 |
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4.4 |
Through The Brush Chemical Delivery |
4-43 |
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4.5 |
Megasonics Post-CMP Clean |
4-45 |
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4.6 |
Micrograph Of 3M Slurryless Pad |
4-54 |
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6.1 |
Effect of Tool MTBF on CMP Cost |
6-5 |
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6.2 |
Removal Rate Vs Throughput and CMP Cost |
6-6 |
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LIST OF
TABLES |
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3.1 |
Levels of Integration of Dynamic Rams |
3-2 |
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3.2 |
Interconnect Levels of Logic Device |
3-3 |
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3.3 |
Typical Process Specifications |
3-11 |
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3.4 |
Organic Polymers for IMD Applications |
3-21 |
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3.5 |
CMP Process Variables |
3-29 |
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3.6 |
Optimized CMP and Post-CMP Clean Parameters |
3-37 |
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3.7 |
Interconnect Materials by Segment |
3-46 |
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4.1 |
CMP Chemical Consumption |
4-14 |
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4.2 |
CMP Chemical Costs |
4-18 |
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4.3 |
Oxide CMP Pad Properties and Performance |
4-50 |
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6.1 |
Polisher Equipment Targets |
6-8 |
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6.2 |
Post-CMP Clean Equipment Targets |
6-9 |
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7.1 |
Worldwide CMP Polisher Market |
7-7 |
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7.2 |
Worldwide CMP Polisher Market Shares |
7-9 |
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7.3 |
Worldwide End-Point Detector Market |
7-11 |
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7.4 |
Worldwide Chemical Distribution/Mixing Market |
7-13 |
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7.5 |
Worldwide Film Thickness/Metrology Market |
7-15 |
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7.6 |
Worldwide CMP Slurry Market |
7-17 |
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7.7 |
Worldwide Slurry Market Shares |
7-19 |
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7.8 |
Worldwide CMP Pad Market |
7-23 |